| PART |
Description |
Maker |
| DMTH8012LPS DMTH8012LPS-13 |
80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| SSE90N08-08 |
90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE |
N-Channel Enhancement Mode Field Effect Transistor2A,80V.9ΩN沟道增强型MOS场效应管（漏电流12A, 漏源电压80V，导通电.9Ω 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NDP508B NDP508BE NDB508BE NDB508A NDB508AE NDB508B |
N-Channel Enhancement Mode Field Effect Transistor9A,80V.08ΩN沟道增强型MOS场效应管（漏电流19A, 漏源电压80V，导通电.08Ω 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PCF35N08 ELECTRONICTHEATRECONTROLSINC.-PCF35N08 |
N-Channel Enhancement-Mode, Power Field-Effect Transistor Chip(80V, 35A, 0.055 Ohm)
|
ETC
List of Unclassifed Manufacturers
|
| ARF448B ARF448A ARF448 |
N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| FDD3510H |
Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM
|
Fairchild Semiconductor
|
| APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation
Anpec Electronics, Corp.
|
| ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
From old datasheet system
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW
Advanced Power Technology
|
| IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
